二维材料与新兴电子用前驱体
2026-06-10 · 系列介绍 · 百灵威授权转载
过渡金属硫族化合物（如MoS₂、WS₂）、氮化硼等二维材料在下一代电子器件中备受关注。CVD/ALD法可实现大面积、高质量二维薄膜生长，关键在于合适的前驱体。百灵威提供钼、钨、铌、锡等金属有机前驱体，以及氧、氮、硫源配套前驱体，助力单层/多层二维材料合成。
产品优势及特点：
- - 钼/钨前驱体：二(二甲基氨基)二(叔丁基亚氨基)钼(VI)、六羰基钨、六羰基钼等，用于MoS₂、WS₂生长。- - 低成核密度：部分前驱体可自限制生长，实现单晶域可控成核。
- - 兼容性：适配多种ALD/CVD反应器，提供钢瓶及安瓿瓶包装。
- - 辅助试剂：提供硫源、硒源（如H₂S、H₂Se替代），以及衬底清洗用电子级溶剂。
应用场景：
- - 二维TMDs（MoS₂、WS₂、ReS₂、SnS₂）的CVD/ALD合成- - 六方氮化硼（h-BN）绝缘层沉积
- - 异质结器件（如MoS₂/h-BN、石墨烯/TMDs）
- - 柔性电子、量子点等新兴领域
核心推荐产品清单
钼/钨前驱体
| 品名 | CAS | 货号 |
|---|---|---|
| Bis(t-butylimido)bis(dimethylamino)molybdenum(VI), 98% 双(叔丁基亚氨基)双(二甲基氨基)钼(VI) | 923956-62-1 | 1822342 |
| Tungsten hexacarbonyl, 99.99%, Used for CVD 六羰基钨 | 14040-11-0 | 184972 |
铌/钽前驱体
| 品名 | CAS | 货号 |
|---|---|---|
| Niobium(V) ethoxide , 98%, ≥99.99% metal basis, for CVD/ALD, please refer to the details page for ordering and cleaning cylinder 五乙醇铌(V) | 3236-82-6 | 963633 |
| (t-Butylimido)tris(diethylamino)niobium(V), 99.999% (叔丁基亚氨基)三(二乙氨基)铌(V) | 210363-27-2 | 1177614 |
| (Tert-butylimino)tris(ethyl(methyl)amino)niobium, 98%, ≥99.99% metal basis, for CVD/ALD, please refer to the details page for ordering and cleaning cylinder (叔丁基亚氨基)三(乙基(甲基)氨基)铌 | 864150-47-0 | 1177615 |
| (t-Butylimido)tris(diethylamino)tantalum(V), 99.9999% 三(二乙氨基)(叔丁基亚氨基)钽(V) | 169896-41-7 | 289272 |
| (t-Butylimido)tris(ethylmethylamino)tantalum(V), 98%, ≥99.99% metal basis, for CVD/ALD, please refer to the details page for ordering and cleaning cylinder 三(乙基甲氨基)(叔丁基亚氨基)钽(V) | 511292-99-2 | 345773 |
锡/钛/钒/钴前驱体
| 品名 | CAS | 货号 |
|---|---|---|
| Tin(II) acetylacetonate, 98%, ≥99.99% metal basis, for CVD/ALD, please refer to the details page for ordering and cleaning cylinder 二(乙酰丙酮酸)锡(II) | 16009-86-2 | 111772 |
| Tetrakis(dimethylamido)tin(IV), 99.9%, trace metal basis 四(二甲氨基)锡(IV) | 1066-77-9 | 542675 |
| Tetrakis(ethylmethylamino)titanium, 98%, ≥99.99% metal basis, for CVD/ALD, please refer to the details page for ordering and cleaning cylinder 四(乙基甲氨基)钛(IV) | 175923-03-2 | 9186316 |
| Vanadium (V) tri-i-propoxy oxide, 98%, ≥99.99% metal basis, for CVD/ALD, please refer to the details page for ordering and cleaning cylinder 三(异丙氧基)氧化钒(V) | 5588-84-1 | 946165 |
| Bis(cyclopentadienyl)cobalt(II), 98%, ≥99.99% metal basis, for CVD/ALD, please refer to the details page for ordering and cleaning cylinder 双(环戊二烯基)钴 | 1277-43-6 | 941710 |
二维材料衬底与辅助试剂
| 品名 | CAS | 货号 |
|---|---|---|
| Wafer-scale graphene transfer film, graphene wafer-scale film transfer to silicon substrate, Four inches, Four inches 晶圆级石墨烯转移膜，石墨烯晶圆级薄膜转移到硅衬底，Four inches | / | 9426698 |
| Non-transferable graphene wafer, quartz substrate, surface resistance below 3000,4 inches, 1 EA=10 pcs, Four inches, 1 EA=10 pcs 无转移石墨烯晶圆，衬底为石英，面电阻低于3000，4英寸，1 EA=10 pcs | / | 9426712 |
| Single layer single crystal graphene wafer, substrate sapphire, roughness: <1 nm, 4 inches, Four inches 单层单晶石墨烯晶圆，衬底为蓝宝石，粗糙度：<1 nm，4英寸 | / | 9426669 |
| Isopropanol, 99.9%, ELH-Ⅲ 异丙醇 | 67-63-0 | 984033 危化品 |
| Propylene glycol methyl ether acetate, 99.9%, ELH-Ⅲ 丙二醇单甲醚乙酸酯 | 108-65-6 | 976499 |
钢瓶配件
| 品名 | CAS | 货号 |
|---|---|---|
| Bis(t-butylimido)bis(dimethylamino)tungsten(VI), 98%, ≥99.99% metal basis, for CVD/ALD, please refer to the details page for ordering and cleaning cylinder 二(二甲氨基)二(叔丁基亚氨基)钨(VI) | 406462-43-9 | 918995 |
| Tetrakis(dimethylamino)titanium, ICPMS-99.9999% 四(二甲氨基)钛 | 3275-24-9 | 952803新 |
| Bis(ethylcyclopentadienyl)ruthenium(II), 99.99%, trace metals basis 双(乙基环戊二烯基)钌(II) | 32992-96-4 | 588417 |
| Bis(ethylcyclopentadienyl)manganese, 98%, ≥99.99% metal basis, for CVD/ALD, please refer to the details page for ordering and cleaning cylinder 二(乙基环戊二烯基)锰(II) | 101923-26-6 | 953383 |
| 50ml Standard cylinder, Suitable for the vast majority of domestic equipments 50mL标准钢瓶 | / | 9395115 |
| 60ml Standard cylinder, Suitable for the equipment of Picosun 60mL标准钢瓶 | / | 9395123 |
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