高k介质薄膜沉积用金属有机前驱体
2026-06-10 · 系列介绍 · 百灵威授权转载
随着集成电路特征尺寸持续缩小,高介电常数(high-k)薄膜作为栅介质层,可有效抑制漏电流并提升器件性能。原子层沉积(ALD)技术凭借亚纳米级厚度控制和大面积均匀性,成为high-k薄膜主流制备方法。我司提供系列高纯度金属有机前驱体,包括铪、锆、钛、铝、钽等配合物,适用于HfO₂、ZrO₂、Al₂O₃、TiO₂、Ta₂O₅等薄膜的ALD/CVD沉积。
产品优势及特点:
- - 高纯度:所有前驱体纯度≥99.99% metal basis,部分达到ICP-99.99%,金属杂质极低。- - 高挥发性:设计为液体或低熔点固体,配合钢瓶输送,适用于商业ALD设备。
- - 稳定性好:对空气和水分敏感度适中,提供钢瓶包装及特殊阀门保护。
- - 品种齐全:覆盖铪、锆、钛、铝、钽等多种金属,支持二元、三元掺杂薄膜开发。
应用场景:
- - 逻辑器件、存储器件中high-k栅介质层(HfO₂、ZrO₂、Al₂O₃)- - 电容介质层、钝化层、封装阻挡层
- - 高k材料性能优化(掺杂、叠层)
核心推荐产品清单
铪前驱体
| 品名 | CAS | 货号 |
|---|---|---|
| Tetrakis(diethylamino)hafnium, 98%, ≥99.99% metal basis, for CVD/ALD, please refer to the details page for ordering and cleaning cylinder 四(二乙氨基)铪(IV) | 19824-55-6 | 113501 |
| Tetrakis(dimethylamido)hafnium(IV), 99% 四(二甲胺基)铪 | 19782-68-4 | 622857新 |
| Tetrakis(ethylmethylamino) hafnium (IV), ICP-99.99% 四(甲乙基氨基)铪(IV) | 352535-01-4 | 997501 |
| Tetrakis(dimethylamido)hafnium(IV), 98%, 99.99%-Hf, <0.15% Zr 四(乙基甲基胺基)铪(IV) | 352535-01-4 | 412116 |
| Hafnium(IV) acetylacetonate, 99% 乙酰丙酮铪(IV) | 17475-67-1 | 585043 |
锆前驱体
| 品名 | CAS | 货号 |
|---|---|---|
| Cyclopentadienyl Tris(dimethylamino) Zirconium, 98%, ≥99.99% metal basis, for CVD/ALD, please refer to the details page for ordering and cleaning cylinder (环戊二烯基)三(二甲氨基)锆 | 33271-88-4 | 1177621 |
| Zirconium, tris(N-methylmethanaminato)[(1,2,3,4,5-η)-1-propyl-2,4-cyclopentadien-1-yl], 98%, ≥99.99% metal basis, for CVD/ALD, please refer to the details page for ordering and cleaning cylinder (正丙基环戊二烯基)三(二甲氨基)锆(IV) | 2192174-63-1 | 9394093 |
| Tetrakis(dimethylamino)zirconium, 99% 四(二甲氨基)锆 | 19756-04-8 | 337870 |
| Zirconium(IV) isopropoxide isopropanol complex, 99.9%, ICP-99.9% 异丙氧基锆异丙醇复合物 | 14717-56-7 | 960784 |
钛前驱体
| 品名 | CAS | 货号 |
|---|---|---|
| Tetrakis(dimethylamino)titanium, ICPMS-99.9999% 四(二甲氨基)钛 | 3275-24-9 | 952803新 |
| Tetrakis(ethylmethylamino)titanium, 98%, ≥99.99% metal basis, for CVD/ALD, please refer to the details page for ordering and cleaning cylinder 四(乙基甲氨基)钛(IV) | 175923-03-2 | 9186316 |
| Tetrakis(diethylamino)titanium(IV), 99.999% 四(二乙氨基)钛(IV) | 4419-47-0 | 903906 |
硅/铝/钽/钨前驱体
| 品名 | CAS | 货号 |
|---|---|---|
| Bis(t-butylimido)bis(dimethylamino)molybdenum(VI), 98% 双(叔丁基亚氨基)双(二甲基氨基)钼(VI) | 923956-62-1 | 1822342 |
| Bis(t-butylimido)bis(dimethylamino)tungsten(VI), 98%, ≥99.99% metal basis, for CVD/ALD, please refer to the details page for ordering and cleaning cylinder 二(二甲氨基)二(叔丁基亚氨基)钨(VI) | 406462-43-9 | 918995 |
| Niobium(V) ethoxide , 98%, ≥99.99% metal basis, for CVD/ALD, please refer to the details page for ordering and cleaning cylinder 五乙醇铌(V) | 3236-82-6 | 963633 |
| Tantalum(V) ethoxide, 99% 乙醇钽(V) | 6074-84-6 | 938530 |
| Pentakis (dimethylamino)tantalum(V), 98% 五(二甲氨基)钽(V) | 19824-59-0 | 579965 |
| Tris(dimethylamino)silane, 99%, 99.999% Si 三(二甲胺基)硅烷 | 15112-89-7 | 282401 |
钢瓶配件
| 品名 | CAS | 货号 |
|---|---|---|
| Bis(diethylamino)silane, 99.9999% 双(二乙氨基)硅烷 | 27804-64-4 | 957403 |
| Bis(t-butylamino)silane, 98%, ≥99.99% metal basis, for CVD/ALD, please refer to the details page for ordering and cleaning cylinder 二(叔丁基氨基)硅烷 | 186598-40-3 | 474608 |
| 50ml Standard cylinder, Suitable for the vast majority of domestic equipments 50mL标准钢瓶 | / | 9395115 |
| 60ml Standard cylinder, Suitable for the equipment of Picosun 60mL标准钢瓶 | / | 9395123 |
相关阅读
高纯无机功能材料:从ALD前驱体到化合物半导体精准构筑光电器件核心:百灵威专业供应全系列有机半导体聚合单体